JPH0154432B2 - - Google Patents

Info

Publication number
JPH0154432B2
JPH0154432B2 JP56070478A JP7047881A JPH0154432B2 JP H0154432 B2 JPH0154432 B2 JP H0154432B2 JP 56070478 A JP56070478 A JP 56070478A JP 7047881 A JP7047881 A JP 7047881A JP H0154432 B2 JPH0154432 B2 JP H0154432B2
Authority
JP
Japan
Prior art keywords
silicon nitride
base material
carbon
deposited
carbon base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56070478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57188408A (en
Inventor
Yukitoshi Matsuo
Yasuhiro Imanishi
Hideo Nagashima
Masaharu Watanabe
Toshiro Usami
Hisashi Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Priority to JP56070478A priority Critical patent/JPS57188408A/ja
Priority to US06/368,440 priority patent/US4515755A/en
Priority to EP82103457A priority patent/EP0065122B1/en
Priority to DE8282103457T priority patent/DE3280107D1/de
Publication of JPS57188408A publication Critical patent/JPS57188408A/ja
Publication of JPH0154432B2 publication Critical patent/JPH0154432B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP56070478A 1981-05-11 1981-05-11 Manufacture of high density silicon nitride Granted JPS57188408A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56070478A JPS57188408A (en) 1981-05-11 1981-05-11 Manufacture of high density silicon nitride
US06/368,440 US4515755A (en) 1981-05-11 1982-04-14 Apparatus for producing a silicon single crystal from a silicon melt
EP82103457A EP0065122B1 (en) 1981-05-11 1982-04-23 Device made of silicon nitride for pulling single crystal of silicon and method of manufacturing the same
DE8282103457T DE3280107D1 (de) 1981-05-11 1982-04-23 Vorrichtungsteil aus siliziumnitrid zum ziehen von einkristallinem silizium und verfahren zu seiner herstellung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070478A JPS57188408A (en) 1981-05-11 1981-05-11 Manufacture of high density silicon nitride

Publications (2)

Publication Number Publication Date
JPS57188408A JPS57188408A (en) 1982-11-19
JPH0154432B2 true JPH0154432B2 (en]) 1989-11-17

Family

ID=13432664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56070478A Granted JPS57188408A (en) 1981-05-11 1981-05-11 Manufacture of high density silicon nitride

Country Status (1)

Country Link
JP (1) JPS57188408A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187147A (en) * 1991-05-31 1993-02-16 Florida State University Method for producing freestanding high Tc superconducting thin films
NO317080B1 (no) * 2002-08-15 2004-08-02 Crusin As Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5490214A (en) * 1977-12-27 1979-07-17 Toshiba Ceramics Co Method of making silicon nitride formed body

Also Published As

Publication number Publication date
JPS57188408A (en) 1982-11-19

Similar Documents

Publication Publication Date Title
KR100592741B1 (ko) 탄화규소성형체
US4123571A (en) Method for forming smooth self limiting and pin hole free SiC films on Si
US20130247334A1 (en) Crucible for Solidifying a Silicon Ingot
JPH0456765B2 (en])
US5882807A (en) Jig for heat treatment and process for fabricating the jig
US4515755A (en) Apparatus for producing a silicon single crystal from a silicon melt
JPH1012692A (ja) ダミーウエハ
JPS61256993A (ja) シリコン単結晶引上げ装置用黒鉛子るつぼ及びヒ−タ−
JPH08509575A (ja) ３ｃ−炭化ケイ素の成長のための基板
TW202128558A (zh) 以碳化鉭被覆之石墨構件及其製造方法
JP2000302576A (ja) 炭化珪素被覆黒鉛材
JPH0154432B2 (en])
JPH01502182A (ja) 炭化ケイ素の製造
JP3657036B2 (ja) 炭化ケイ素薄膜および炭化ケイ素薄膜積層基板の製造方法
JPS6374995A (ja) エピタキシヤル成長用黒鉛材料
JPH0688866B2 (ja) 窒化ホウ素被覆ルツボおよびその製造方法
JPH0798708B2 (ja) 熱分解窒化ホウ素被覆物品の製造方法
JP4309509B2 (ja) 熱分解黒鉛からなる単結晶成長用のルツボの製造方法
JPS61236672A (ja) 熱分解窒化ホウ素被覆物品及びその製法
JPS61251593A (ja) 高純度半導体単結晶製造用ルツボ
US20020071803A1 (en) Method of producing silicon carbide power
JP2003034867A (ja) 管状ＳｉＣ成形体およびその製造方法
JPH0456766B2 (en])
US4550014A (en) Method for production of free-standing polycrystalline boron phosphide film
JPH053410B2 (en])